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MRF6V2010NB Datasheet

  • MRF6V2010NB

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: Order from RF Marketing
Rev. 4, 12/2006
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for pulsed wideband large - signal output and driver
applications with frequencies up to 450 MHz. Devices are unmatched and are
suitable for use in industrial, medical and scientific applications.
鈥?/div>
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 35 mA,
P
out
= 10 Watts
Power Gain 鈥?25 dB
Drain Efficiency 鈥?64%
鈥?/div>
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
鈥?/div>
Integrated ESD Protection
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Facilitates Manual Gain Control, ALC and Modulation Techniques
鈥?/div>
225擄C Capable Plastic Package
鈥?/div>
RoHS Compliant
MRF6V2010N
MRF6V2010NB
PREPRODUCTION
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF6V2010N
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF6V2010NB
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +110
- 0.5, +10
- 65 to +150
225
Unit
Vdc
Vdc
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature TBD擄C, TBD W CW
Case Temperature TBD擄C, TBD W CW
Symbol
R
胃JC
Value
(3)
TBD
TBD
Unit
擄C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
TBD (Minimum)
TBD (Minimum)
TBD (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. (Calculator available when part is in production.)
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
This document contains information on a preproduction product. Specifications and information herein are subject to change without notice.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6V2010N MRF6V2010NB
1
RF Device Data
Freescale Semiconductor

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