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MRF6S19100HR3_06 Datasheet

  • MRF6S19100HR3_06

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6S19100H
Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 900 mA,
P
out
= 22 Watts Avg., Full Frequency Band, IS - 95 (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?16.1 dB
Drain Efficiency 鈥?28%
IM3 @ 2.5 MHz Offset 鈥?- 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset 鈥?- 51 dBc in 30 kHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
渭鈥?/div>
Nominal.
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19100HR3
MRF6S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S19100HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
398
2.3
- 65 to +150
150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 100 W CW
Case Temperature 77擄C, 22 W CW
Symbol
R
胃JC
Value
(1,2)
0.44
0.50
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S19100HR3 MRF6S19100HSR3
1
RF Device Data
Freescale Semiconductor

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