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MRF654 Datasheet

  • MRF654

  • Motorola, Inc [RF POWER TRANSISTOR NPN SILICON]

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF654/D
NPN Silicon
RF Power Transistor
. . . designed for 12.5 Volt UHF large鈥搒ignal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
鈥?/div>
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 15 W
Minimum Gain = 7.8 dB
Efficiency = 55%
鈥?/div>
Built鈥揑n Matching Network for Broadband Operation
鈥?/div>
Gold Metallized, Emitter Ballasted for Long Life and Reliability
鈥?/div>
Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage
鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF654
15 W, 470 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244鈥?4, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
16
36
4.0
4.0
44
0.25
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
4.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector鈥揅utoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16
36
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF654
1

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