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MRF641 Datasheet

  • MRF641

  • Motorola, Inc [RF POWER TRANSISTOR NPN SILICON]

  • 106.81KB

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF641/D
NPN Silicon
RF Power Transistor
. . . designed for 12.5 Volt UHF large鈥搒ignal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
鈥?/div>
Specified 12.5 Volt, 470 MHz Characteristics 鈥?/div>
Output Power = 15 Watts
Minimum Gain = 7.8 dB
Efficiency = 55%
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Built鈥揑n Matching Network for Broadband Operation
鈥?/div>
Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @
16鈥揤olt High Line and Overdrive
鈥?/div>
Circuit board photomaster available upon request by contacting RF Tactical
Marketing in Phoenix, AZ.
MRF641
15 W, 470 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
16
36
4.0
3.0
43.7
0.25
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
4.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25擄C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16
36
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF641
1

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