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MRF658 Datasheet

  • MRF658

  • Motorola, Inc [RF POWER TRANSISTOR NPN SILICON]

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF658/D
NPN Silicon
RF Power Transistor
Designed for 12.5 Volt UHF large鈥搒ignal, common emitter, class鈥揅 amplifier
applications in industrial and commercial FM equipment operating to 520 MHz.
鈥?/div>
Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 65 Watts
Minimum Gain = 4.15 dB
Minimum Efficiency = 50%
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
from 400 to 520 MHz
鈥?/div>
Built鈥揑n Matching Network for Broadband Operation
鈥?/div>
Triple Ion Implanted for More Consistent Characteristics
鈥?/div>
Implanted Emitter Ballast Resistors for Improved Ruggedness
鈥?/div>
Silicon Nitride Passivated
鈥?/div>
Capable of Surviving Load Mismatch Stress at all Phase Angles with
20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive
MRF658
65 W, 512 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Value
16.5
38
4.0
15
175
1.0
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25擄C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16.5
38
4.0
鈥?/div>
29
45
4.6
0.1
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
mAdc
(continued)
REV 7
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF658
1

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