鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
16.5
38
4.0
2.75
44
0.25
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
MRF653
10 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244鈥?4, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
4.0
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 20 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
Gpe
畏
c
蠄
No Degradation in Output Power
16.5
38
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
20
鈥?/div>
120
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
鈥?/div>
22
28
pF
FUNCTIONAL TESTS
Common鈥揈mitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Load Mismatch Stress
(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,
VSWR = 20:1, All Phase Angles)
7.0
55
8.0
65
鈥?/div>
鈥?/div>
dB
%
NOTE:
1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.
REV 8
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF653
1
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