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MT3S05T_07 Datasheet

  • MT3S05T_07

  • Toshiba Semiconductor [VHF~UHF Band Low Noise Amplifier App...

  • TOSHIBA

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MT3S05T
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
MT3S05T
VHF~UHF Band Low Noise Amplifier Applications
鈥?/div>
鈥?/div>
鈥?/div>
Suitable for use in an OSC
Low noise figure
NF = 1.4dB
Excellent collector current linearity
|S21e|
2
= 8.5dB (@1 V/5 mA/1 GHz)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
Tstg
Rating
10
5
2
40
10
100
125
鈭?5~125
Unit
V
V
V
mA
mA
mW
擄C
擄C
JEDEC
JEITA
鈥?/div>
鈥?/div>
TOSHIBA
2-1B1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 2.2 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
3
T
1
K
2
1
2007-11-01

MT3S05T_07相關(guān)型號(hào)PDF文件下載

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