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MT3S04AFS Datasheet

  • MT3S04AFS

  • Toshiba Semiconductor [VHF~UHF Band Low-Noise Amplifier App...

  • TOSHIBA

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MT3S04AFS
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
MT3S04AFS
0.6鹵0.05
0.35鹵0.05
0.2鹵0.05
1
3
2
0.8鹵0.05
1.0鹵0.05
0.1鹵0.05
0.1鹵0.05
1.Base
2.Emitter
3.Collector
VHF~UHF Band Oscillator Applications
鈥?/div>
鈥?/div>
Superior performance in oscillator applications
Superior noise characteristics
: NF = 1.3 dB, |S
21e
| = 9.5 dB (f = 1 GHz)
2
Absolute Maximum Ratings
(Ta
=
25擄C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
10
5
2
40
10
85
125
鈭?5~125
Unit
V
V
V
mA
mW
mW
擄C
擄C
fSM
JEDEC
JEITA
Toshiba
0.48
-0.04
+0.02
0.15鹵0.05
VHF~UHF Band Low-Noise Amplifier Applications
Unit: mm
鈥?/div>
鈥?/div>
2-1E1A
Weight: 0.0006 g (typ.)
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the
appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
2
Note 1:
10 mm
脳
1.0 mm (t), mounted on a glass-
epoxy
printed circuit board.
Marking
3
01
2
1
1
2007-11-01

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