CXT5551HC
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT5551HC
type is an high current NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage and high current
amplifier applications.
MARKING CODE: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS
(TA=25擄C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
螛
JA
UNITS
V
V
V
A
W
擄C
擄C/W
180
160
6.0
1.0
1.2
-65 to +150
104
ELECTRICAL CHARACTERISTICS
(TA=25擄C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=120V
ICBO
VCB=120V, TA=100擄C
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
VEB=4.0V
IC=100碌A(chǔ)
IC=1.0mA
IE=10碌A(chǔ)
IC=10mA,
IC=50mA,
IC=10mA,
IB=1.0mA
IB=5.0mA
IB=1.0mA
80
80
30
180
160
6.0
TYP
MAX
50
50
50
UNITS
nA
碌A(chǔ)
nA
V
V
V
0.15
0.20
1.00
1.00
250
10
100
15
V
V
V
V
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0A
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
MHz
pF
R0 (28-January 2005)
1
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