CXT5401E
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CXT5401E
is a PNP Silicon Transistor, packaged in an
SOT-89 case, designed for general purpose
amplifier applications requiring high breakdown
voltage.
MARKING CODE: FULL PART NUMBER
SOT-89 CASE
APPLICATIONS:
鈥?General purpose switching and amplification
鈥?Telephone applications
FEATURES:
鈥?High Collector Breakdown Voltage 250V
鈥?Low Leakage Current 50nA Max
鈥?Low Saturation Voltage 150mV Max @ 50mA
鈥?Complementary Device CXT5551E
鈥?SOT-89 Surface Mount Package
MAXIMUM RATINGS:
(TA=25擄C)
鈾?/div>
鈾?/div>
Collector-Emitter Voltage
鈾?/div>
Emitter-Base Voltage
Collector-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
螛
JA
250
220
7.0
600
1.2
-65 to +150
104
UNITS
V
V
V
mA
W
擄C
擄C/W
ELECTRICAL CHARACTERISTICS:
(TA=25擄C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
VCB=120V
VCB=120V, TA=100擄C
VEB=3.0V
渭
IC=100渭A
IC=1.0mA
渭
IE=10渭A
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
250
220
7.0
MAX
50
50
50
UNITS
nA
渭A
nA
V
V
V
鈾?/div>
鈾?/div>
BVCEO
鈾?/div>
BVEBO
鈾?/div>
VCE(SAT)
鈾?/div>
VCE(SAT)
VBE(SAT)
VBE(SAT)
IEBO
BVCBO
100
150
1.00
1.00
mV
mV
V
V
鈾?/div>
Enhanced Specification
R0 (10-May 2006)
CXT5401E相關(guān)型號PDF文件下載
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型號
版本
描述
廠商
下載
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