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BUK7614-55A Datasheet

  • BUK7614-55A

  • Philips Semiconductors [TrenchMOS standard level FET]

  • PHILIPS

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Philips Semiconductors
Product specification
TrenchMOS餂?transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope
available in TO220AB and SOT404 .
Using 鈥檛rench鈥?technology which
features
very
low
on-state
resistance. It is intended for use in
automotive and general purpose
switching applications.
BUK7514-55A
BUK7614-55A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
73
149
175
14
UNIT
V
A
W
藲C
m鈩?/div>
PINNING
TO220AB & SOT404
PIN
1
2
3
DESCRIPTION
gate
drain
2
PIN CONFIGURATION
mb
tab
SYMBOL
d
g
3
SOT404
1 2 3
source
1
tab/mb drain
TO220AB
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
鹵V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k鈩?/div>
-
T
mb
= 25 藲C
T
mb
= 100 藲C
T
mb
= 25 藲C
T
mb
= 25 藲C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
73
52
266
166
175
UNIT
V
V
V
A
A
A
W
藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
in free air
Minimum footprint, FR4
board
TYP.
-
60
50
MAX.
0.9
-
-
UNIT
K/W
K/W
K/W
July 2000
1
Rev 1.000

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