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M14C32 Datasheet

  • M14C32

  • Memory Micromodules General Information for D1, D2 and C Pac...

  • 13頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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MICROMODULES
RELIABILITY
Product qualification and on-going reliability
monitoring is performed by ST. The principal steps
are listed in Table 8 and Table 9.
Table 8. Package Related Tests
Test
1
2
3
4
5
Description
Geometry
Visual inspection
Temperature cycling
Salt atmosphere
corrosion of contacts
Moisture resistance
Vibration with electrical
measurement
Method
ST Specification
Condit ion
Monitoring/Lot
5
AQL= 0.040
5
15
7
LPTD
Criteria
(note 1)
0/45
0/315
0/45
0/15
0/32
ST Specification Outgoing/Lot
MIL-STD-883
Method 1010
MIL-STD-883
Method 1009
MIL-STD-883
Method 1004
ISO/IEC 10373
-40
擄C
to 150
擄C,
100 cycles
35
擄C,
5% NaCl, 24 hour
85
擄C,
85% HR Biased 5.5 V,
168 hour
6
1 octave/minute, acceleration up to
10 G (repeated 20 times)
20
measurement memory check at 25
擄C
Long side: deflection 2 cm
Short side: deflection 1 cm
30 bendings per minute
Maximum displacement 15擄
鹵1擄
1000 torsions, 30 torsions per minute
applied on long side only
20
0/11
7
Bending properties
ISO/IEC 7816-1
0/11
8
Torsion properties
ISO/IEC 7816-1
20
0/11
Note: 1. The notation
m/n
means: reject the whole lot if more than
m
devices fail from a sample of
n
devices. For instance, 0/45 means a
sample of 45 devices taken from a lot, with the whole lot only accepted if every one of the 45 sample devices passed the test.
Table 9. Product Related Tests
Test
1
2
Description
Life test
Electrostatic discharge
Electrostatic discharge
3
4
Data retention,
Temperature storage
Write/Erase cycles
Method
MIL-STD-883
Method 1005
MIL-STD-883
Method 3015
MIL-STD-883
Method 3015
MIL-STD-883
Method 1005
ST Specification
Condit ion
140
擄C,
6 V, 504 hours measurement
memory check at 25
擄C
Human body model:
1.5 k鈩? 100 pF,
鹵
5000 V
3
n/a
LPTD
Criteria
0/76
0/9
0/9
0/45
0/32
Machine model: 0
鈩?
200 pF,
鹵
200 V n/a
measurement memory check at 25
擄C
150
擄C,
1000 hours, no bias
5
measurement memory check at 25
擄C
100,000 Cycles
200 ppm/
1024 byte/
1000 cycle
15
15
15
5
6
7
Magnetic field, memory
check
X-rays, memory check
UV light, memory check
ISO IEC 10373
ISO IEC 10373
ISO IEC 10373
79,500 A/m
70 kV, 0.1 Grey
15 W.s/cm
2
, 30 minutes maximum
1/25
1/25
1/25
5/13

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