Transistor
P
C
鈥?Ta
1000
6
Ta=25藲C
5
I
B
=5.0mA
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
2
1.0mA
2SD2575
I
C
鈥?V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
Ta=75藲C
25藲C
鈥?5藲C
V
CE(sat)
鈥?I
C
I
C
/I
B
=30
Collector power dissipation P
C
(mW)
Collector current I
C
(A)
800
4
600
3
400
200
0.5mA
1
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (藲C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
鈥?I
C
2400
90
C
ob
鈥?V
CB
Collector output capacitance C
ob
(pF)
V
CE
=2V
f=1MHz
I
E
=0
Ta=25藲C
Ta=75藲C
Forward current transfer ratio h
FE
2000
25藲C
75
1600
鈥?5藲C
60
1200
45
800
30
400
15
0
1
3
10
30
100
300
1000
0
1
3
10
30
100
Collector current I
C
(mA)
Collector to base voltage V
CB
(V)
2