Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
q
Low collector to emitter saturation voltage V
CE(sat)
.
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*1
Measuring
(Ta=25藲C)
Ratings
15
10
10
9
5
750
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
Symbol
V
CBO
V
CEO
V
EBO
I
CP*1
I
C
P
C
T
j
T
stg
13.5鹵0.5
5.1鹵0.2
s
Features
0.45
鈥?.1
1.27
+0.2
0.45
鈥?.1
1.27
+0.2
1 2 3
2.3鹵0.2
2.54鹵0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
time: t = 380碌sec
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 5V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*
V
CE
= 2V, I
C
= 2A
*
I
C
= 3A, I
B
= 0.1A
*
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
10
10
700
195
0.28
170
45
*
min
typ
max
0.1
1.0
0.1
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
0.5
V
MHz
65
pF
Pulse measurement
1
1
2
