IRFP440
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
IRFP440
500
500
8.8
5.6
35
鹵20
150
1.2
480
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Speci鏗乧ations
PARAMETER
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured from the drain
Lead, 6mm (0.25in) from
the Package to the
Center of the Die
Measured from the
Source Lead, 6mm
(0.25in) from Header to
the Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
V
GS
= 0V, I
D
= 250碌A(chǔ) (Figure 10)
V
GS
= V
DS
, I
D
= 250碌A(chǔ)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
鹵20V
V
GS
= 10V, I
D
= 4.9A (Figures 8, 9)
V
DS
鈮?/div>
50V, I
D
= 4.9A (Figure 12)
V
DD
= 250V, I
D
鈮?/div>
8A, R
GS
= 9.1鈩? R
L
= 30.1鈩?/div>
MOSFET Switching Times are Essentially
Independent of Operating Temperature
MIN
500
2.0
-
-
8.8
-
-
5.3
-
-
-
-
TYP
-
-
-
-
-
-
0.800
8.2
17
23
42
18
42
7
22
1225
200
85
5.0
MAX
-
4.0
25
250
-
鹵100
0.850
-
21
35
74
30
63
-
-
-
-
-
-
UNITS
V
V
碌A(chǔ)
碌A(chǔ)
A
nA
鈩?/div>
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain 鈥淢iller鈥?Charge
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
V
GS
= 10V, I
D
= 8A, V
DS
= 0.8 x Rated BV
DSS
I
g(REF)
= 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
-
-
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz (Figure 11)
-
-
-
-
Internal Source Inductance
L
S
-
12.5
-
nH
Junction to Case
Junction to Ambient
R
胃JC
R
胃JA
Free Air Operation
-
-
-
-
0.83
30
oC/W
oC/W
4-348
Intersil
1
2
3
4
5
6
7
