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SPD30N03 Datasheet

  • SPD30N03

  • SIPMOS ? Power Transistor

  • Infineon   Infineon

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SIPMOS廬 Power Transistor
Features
鈥?/div>
N channel
鈥?/div>
Enhancement mode
SPD 30N03
30
30
V
A
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
I
D
R
DS(on)
0.015
鈩?/div>
鈥?/div>
Avalanche rated
鈥?/div>
dv/dt rated
鈥?/div>
175藲C operating temperature
Type
SPD30N03
SPU30N03
Package
P-TO252
Ordering Code
Packaging
Pin 1
G
Pin 2 Pin 3
D
S
Q67040-S4144-A2 Tape and Reel
P-TO251-3-1 Q67040-S4146-A2 Tube
Maximum Ratings,
at
Tj
= 25 藲C, unless otherwise specified
Parameter
Continuous drain current
Symbol
Value
30
30
120
250
12
6
kV/碌s
mJ
Unit
A
I
D
T
C
= 25 藲C,
1)
T
C
= 100 藲C
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 藲C
Avalanche energy, single pulse
I
D
= 30 A,
V
DD
= 25 V,
R
GS
= 25
鈩?/div>
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
I
S
= 30 A,
V
DS
= 24 V, di/dt = 200 A/碌s,
T
jmax
= 175 藲C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
鹵20
120
-55... +175
55/175/56
V
W
藲C
T
C
= 25 藲C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99

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SPU30N03

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