0.260鈩?/div>
3.56 (0.140)
BSC
19.05 (0.750)
12.70 (0.500)
5.08 (0.200)
BSC
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 1 鈥?Drain
Pin 2 鈥?Source
Pin 3 鈥?Gate
鈥?Faster Switching
鈥?Lower Leakage
鈥?TO鈥?58 Hermetic Package
D
G
S
StarMOS is a new generation of high voltage
N鈥揅hannel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain 鈥?Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate 鈥?Source Voltage
Gate 鈥?Source Voltage Transient
Total Power Dissipation @ T
case
= 25擄C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063鈥?from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
500
18.5
74
鹵30
鹵40
200
1.6
鈥?5 to 150
300
18.5
30
1210
V
A
A
V
W
W/擄C
擄C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25擄C, L = 7.07mH, R
G
= 25鈩? Peak I
L
= 18.5A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
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