SD1541-01
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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DESIGNED FOR HIGH POWER PULSED
IFF AND DME APPLICATIONS
400 (min.) DME 1025 - 1150 MHz
6.5 dB MIN. GAIN
REFRACTORY GOLD METALLIZATION
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
30:1 LOAD VSWR CAPABILITY AT
SPECIFICIED OPERATING CONDITIONS
INPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
.400 x .500 2LFL (M112)
hermetically sealed
ORDER CODE
SD1541-01
BRANDING
SD1541-1
PIN CONNECTION
DESCRIPTION
The SD1541-01 is a hermetically sealed, gold me-
tallized, silicon NPN power transistor. The SD1541-
01 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ce-
ramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
擄
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
65
65
3.5
22
1458
+200
鈭?/div>
65 to +150
V
V
V
A
W
擄
C
擄
C
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance
November 1992
0.12
擄C/W
1/5
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