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RSF05G1-3P Datasheet

  • RSF05G1-3P

  • LOW POWER SWITCHING AND CONTROL APPLICATIONS

  • Toshiba

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RSF05G1鈭?P,RSF05G1鈭?P,RSF05G1鈭?P
TOSHIBA THYRISITOR SILICON PLANAR TYPE
RSF05G1鈭?P,RSF05G1鈭?P,RSF05G1鈭?P
LOW POWER SWITCHING AND CONTROL APPLICATIONS
Unit: mm
l
Repetitive Peak Off鈭扴tate Voltage
Repetitive Peak Reverse Voltage
l
Average On鈭扴tate Current
l
Plastic Mold Type
l
Reduce a Quantity of Parts and Manufacturing
Process Because of Built-in R
GK
: R
GK
=
1k鈩?
2.7k鈩? 5.1k鈩?/div>
(Typical)
: V
DRM
= 400V
: V
RRM
= 400V
: I
T (AV)
= 500mA
MAXIMUM RATINGS
CHARACTERISTIC
RSF05G1鈭?P
Repetitive Peak
Off鈭扴tate Voltage and
RSF05G1鈭?P
Repetitive Peak
Reverse Voltage
RSF05G1鈭?P
Non鈭扲epetitive Peak
Reverse Voltage
(Non鈭扲epetitive<
5ms, Tj = 0~125擄C)
RSF05G1鈭?P
RSF05G1鈭?P
RSF05G1鈭?P
I
T(AV)
I
T(RMS)
I
TSM
I t
di / dt
P
GM
P
G(AV)
V
FGM
V
RGM
I
GM
T
j
T
stg
2
SYMBOL
RATING
400
UNIT
V
DRM
V
RRM
400
400
500
V
V
DSM
500
500
500
800
9 (50Hz)
10 (60Hz)
0.4
10
0.1
0.01
3.5
鈭?
125
鈭?0~125
鈭?0~125
V
Average On鈭扴tate Current
(Half Sine Waveform)
R.M.S. On鈭扴tate Current
Peak One Cycle Surge On鈭扴tate
Current (Non鈭扲epetitive)
I t Limit Value
Critical Rate of Rise of On鈭扴tate
Current
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature
2
mA
mA
A
A s
A / 碌s
W
W
V
V
mA
擄C
擄C
2
JEDEC
JEITA
TOSHIBA
Weight: 0.2g
TO鈭?2
SC鈭?3
13鈭?A1A
EQUIVALENT CIRCUIT
Note:
di / dt Test Condition, i
G
= 5mA, t
gw
= 10碌s, t
gr
鈮?/div>
250ns
1
2001-07-10

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