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RD70HVF1 Datasheet

  • RD70HVF1

  • RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W ...

  • 8頁

  • MITSUBISHI   MITSUBISHI

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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD70HVF1
DRAWING
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W
DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.
OUTLINE
4-C2
FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band
24.0+/-0.6
2
10.0+/-0.3
9.6+/-0.3
3
R1.6+/-0.15
0.1
-0.01
4.5+/-0.7
6.2+/-0.7
+0.05
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
RD70HVF1-101
is a RoHS compliant products.
RoHS compliance is indicate by the letter 鈥淕鈥?after
the Lot Marking.
3.3+/-0.2
RoHS COMPLIANT
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25
擄C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
擄C
Zg=Zl=50
鈩?/div>
-
-
-
junction to case
RATINGS
30
+/-20
150
10(Note2)
20
175
-40 to +175
1.0
UNIT
V
V
W
W
A
擄C
擄C
擄C/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 20W
ELECTRICAL CHARACTERISTICS
(Tc=25
擄C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout
畏D
Pout
畏D
PARAMETER
Zerogate voltage drain current
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=175MHz ,V
DD
=12.5V
Pin=6W, Idq=2.0A
f=520MHz ,V
DD
=12.5V
Pin=10W, Idq=2.0A
V
DD
=15.2V,Po=70W(PinControl)
f=175MHz,Idq=2.0A,Zg=50
鈩?/div>
LoadVSWR=20:1(All phase)
V
DD
=15.2V,Po=50W(PinControl)
f=520MHz,Idq=2.0A,Zg=50
鈩?/div>
Load VSWR=20:1(All phase)
LIMITS
MIN
TYP MAX.
-
-
300
-
-
5
1.3
1.8
2.3
70
75
-
55
60
-
50
55
-
50
55
-
No destroy
UNIT
uA
uA
V
W
%
W
%
-
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD70HVF1
MITSUBISHI ELECTRIC
1/8
10 Jan 2006

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  • 英文版
    Silicon MOSFET Power Transistor 30MHz, 70W
    MITSUBISHI
  • 英文版
    Silicon MOSFET Power Transistor 30MHz, 70W
    MITSUBISHI ...
  • 英文版
    RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W ...
    MITSUBISHI

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