PZTA96ST1
Preferred Device
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Total Power Dissipation Up to
T
A
= 25擄C (Note 1)
Storage Temperature Range
Junction Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
T
J
Value
鈥?50
鈥?50
鈥?.0
鈥?00
1.5
鈥?5 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
擄C
擄C
4
http://onsemi.com
COLLECTOR 2,4
BASE
1
EMITTER 3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction to
Ambient (Note 1)
Symbol
R
qJA
Max
83.3
Unit
擄C
1
2
3
AWW
ZTA96
ELECTRICAL CHARACTERISTICS
(Note 2)
Characteristic
Symbol
Min
Max
Unit
SOT鈥?23, TO鈥?61AA
CASE 318E
STYLE 1
A
WW
= Location
= Work Week
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?.0 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 鈥?00
mAdc,
I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 鈥?0
mAdc,
I
C
= 0)
Collector鈥揃ase Cutoff Current
(V
CB
= 鈥?00 Vdc, I
E
= 0)
Emitter鈥揃ase Cutoff Current
(V
BE
= 鈥?.0 Vdc, I
C
= 0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
鈥?50
鈥?50
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
鈥?.1
Vdc
Vdc
Vdc
mAdc
mAdc
Preferred
devices are recommended choices for future use
and best overall value.
ORDERING INFORMATION
Device
PZTA96ST1
Package
SOT鈥?23
Shipping
1000/Tape & Reel
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 鈥?0 mAdc, V
CE
= 鈥?0 Vdc)
Saturation Voltages
(I
C
= 鈥?0 mAdc, I
B
= 鈥?.0 mAdc)
(I
C
= 鈥?0 mAdc, I
B
= 鈥?.0 mAdc)
h
FE
50
150
鈥?/div>
Vdc
V
CE(sat)
V
BE(sat)
鈥?/div>
鈥?/div>
鈥?.6
鈥?.0
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 in
2
.
2. T
A
= 25擄C unless otherwise noted.
3. Pulse Test: Pulse Width
鈮?/div>
300
ms;
Duty Cycle = 2.0%.
漏
Semiconductor Components Industries, LLC, 2002
1
June, 2002 鈥?Rev. 1
Publication Order Number:
PZTA96ST1/D
PZTA96S/D相關(guān)型號(hào)PDF文件下載
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