thermal conduction, and allows visual inspection of soldered joints.
the possibility of damage to the die.
鈥?/div>
Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= 25擄C
(1)
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
PZT2907AT1
ON Semiconductor Preferred Device
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
COLLECTOR
2,4
1
2
3
4
3
EMITTER
CASE 318E-04, STYLE 1
TO-261AA
Value
鈥?0
鈥?0
鈥?.0
鈥?00
1.5
12
鈥?5 to 150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625鈥?from case
Time in Solder Bath
R
胃JA
T
L
83.3
260
10
擄C/W
擄C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 鈥?0
碌Adc,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Emitter-Base Breakdown Voltage (I
E
= 鈥?0
碌Adc,
I
C
= 0)
Collector-Base Cutoff Current (V
CB
= 鈥?0 Vdc, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 鈥?0 Vdc, V
BE
= 0.5 Vdc)
Base-Emitter Cutoff Current (V
CE
= 鈥?0 Vdc, V
BE
= 鈥?.5 Vdc)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
BEX
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
擄鈥斅?/div>
鈥?/div>
擄鈥斅?/div>
擄鈥斅?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0
鈥?0
鈥?0
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 5
Publication Order Number:
PZT2907AT1/D
next
PZT2907AT3 產品屬性
4,000
分離式半導體產品
晶體管(BJT) - 單路
-
PNP
600mA
60V
1.6V @ 50mA,500mA
-
100 @ 150mA,10V
1.5W
200MHz
表面貼裝
TO-261-4,TO-261AA
SOT-223
帶卷 (TR)
PZT2907AT3相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
NPN Silicon Switching Transistors
-
英文版
Suface Mount Si-Epitaxial Planar Switching Transistors
DIOTEC
-
英文版
NPN Silicon Switching Transistors
SIEMENS [S...
-
英文版
PNP Silicon Switching Transistors
-
英文版
Suface Mount Si-Epitaxial Planar Switching Transistors
DIOTEC
-
英文版
PNP Silicon Switching Transistors
SIEMENS [S...
-
英文版
NPN Silicon Switching Transistors
-
英文版
NPN General Purpose Amplifier
FAIRCHILD
-
英文版
NPN switching transistor
PHILIPS
-
英文版
NPN Silicon Planar Epitaxial Transistor
-
英文版
Suface Mount Si-Epitaxial Planar Switching Transistors
DIOTEC
-
英文版
NPN GENERAL PURPOSE AMPLIFIER
UTC-IC
-
英文版
NPN Silicon Switching Transistors
PHILIPS [ Phil...
-
英文版
NPN General Purpose Amplifier
FAIRCHILD ...
-
英文版
NPN General Purpose Amplifier
FAIRCHILD ...
-
英文版
NPN switching transistor
PHILIPS [P...
-
英文版
NPN Silicon Switching Transistors
SIEMENS [S...
-
英文版
PNP SILICON TRANSISTOR SURFACE MOUNT
ONSEMI
-
英文版
SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT
-
英文版
PNP Silicon Switching Transistors