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P12NB30FP Datasheet

  • P12NB30FP

  • N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP12NB30
STP12NB30FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH鈩?MOSFET
PRELIMINARY DATA
TYPE
STP3NB60
STP12NB30F P
s
s
s
s
s
V
DSS
300 V
300 V
R
DS(on)
< 0.40
鈩?/div>
< 0.40
鈩?/div>
I
D
12A
6.5 A
TYPICAL R
DS(on)
= 0.34
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
1
2
3
1
2
3
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY(UPS)
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt(
1
)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage T emperature
Max. O perating Junction Temperature
o
o
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
ST P12NB30
ST P12NB30FP
300
300
鹵
30
12
7.5
48
125
1
5.5
錚?/div>
-65 to 150
150
6.5
4
48
35
0.28
5.5
2000
Uni t
V
V
V
A
A
A
W
W/
o
C
V/ ns
V
o
o
C
C
1/6
January 1998

P12NB30FP相關型號PDF文件下載

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    廠商
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  • 英文版
    SINGLE O/P, DC-HV DC PCB MOUNT,
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRON...

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