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P1087 Datasheet

  • P1087

  • P-Channel Switch

  • 3頁

  • FAIRCHILD

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P1087
P1087
P-Channel Switch
鈥?This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
鈥?Sourced from process 88.
TO-92
D S G
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
DG
V
GS
I
GF
T
J
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Value
- 30
30
50
-55 ~ +150
Units
V
V
mA
擄C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
GSS
I
GSS
I
D
(off)
I
DGO
I
DSS
V
GS
(off)
V
DS
(on)
r
DS
(on)
r
ds
(on)
C
iss
C
rss
t
d
(on)
t
r
t
d
(off)
t
f
Parameter
Gate-Source Breakdown Voltage
Gate Reverse Current
Drain Cutoff Leakage Current
Drain-Gate Leakage Current
Zero-Gate Voltage Drain Current
Gate-Source Cutoff Voltage
Drain-Source On Voltage
Drain-Source On Resistance
Drain-Source On Resistance
Input Capacitance
Reverse Transfer Capacitance
Trun On Time
Rise Time
Trun Off Time
Fall Time
Test Condition
V
DS
= 0V, IG = 1碌A(chǔ)
V
GS
= 15V
V
DS
= 15V
V
GS
= 7V
V
DG
= 15V
I
S
= 0
T = +85擄C
T = +85擄C
5
5
0.5
150
150
45
10
15
75
25
100
Min.
30
Typ.
Max.
2
10
0.5
2
0.1
Units
V
nA
nA
碌A(chǔ)
N
A
碌A(chǔ)
mA
V
V
鈩?/div>
鈩?/div>
pF
pF
ns
ns
ns
ns
V
DS
= 20V, V
GS
= 0V
V
DS
= 15V, I
D
= 1碌A(chǔ)
V
GS
= 0V, I
D
= 3mA
V
GS
= 0V, I
D
= 1mA
V
GS
= 0V, I
D
= 0, f = 1kHz
V
DS
= 15V, V
GS
= 0V, f = 1MHz
V
DS
= 0V, V
GS
= 7V, f = 1MHz
V
DD
= -6V
V
GS
(off) = +7V
R
L
= 1.8k鈩?/div>
I
D
(on) = -3mA
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JC
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
125
357
Units
mW
mW/擄C
擄C/W
擄C/W
漏2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002

P1087 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 2,000

  • 分離式半導(dǎo)體產(chǎn)品

  • JFET(結(jié)點(diǎn)場效應(yīng)

  • -

  • 5mA @ 20V

  • -

  • -

  • P 溝道

  • 30V

  • 5V @ 1µA

  • 45pF @ 15V

  • 150 歐姆

  • 通孔

  • 散裝

  • TO-226-3、TO-92-3 標(biāo)準(zhǔn)主體

  • TO-92-3

  • 350mW

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