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MW4IC2230GNBR1 Datasheet

  • MW4IC2230GNBR1

  • RF LDMOS Wideband Integrated Power Amplifiers

  • 12頁(yè)

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MW4IC2230N
Rev. 6, 5/2006
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale鈥檚 newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
鈥?/div>
Typical Single - Carrier W - CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?31 dB
Drain Efficiency 鈥?15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
鈥?/div>
Typical Single - Carrier W - CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
鈥?/div>
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
鈥?/div>
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
P
out
.
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
鈥?/div>
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
鈥?/div>
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
鈥?/div>
Integrated ESD Protection
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230NBR1
MW4IC2230GNBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GNBR1
V
RD1
V
RG1
V
DS2
V
DS1
GND
V
DS2
V
RD1
V
RG1
V
DS1
3 Stages I
C
RF
in
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
14
V
DS3/
RF
out
RF
in
V
DS3
/RF
out
V
GS1
V
GS2
V
GS3
V
GS1
V
GS2
V
GS3
GND
13
12
(Top View)
GND
Quiescent Current
Temperature Compensation
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC2230NBR1 MW4IC2230GNBR1
1
RF Device Data
Freescale Semiconductor

MW4IC2230GNBR1 PDF文件相關(guān)型號(hào)

MW4IC2230NBR1,MW4IC915,MW5IC2030GNBR1,MW5IC2030M

MW4IC2230GNBR1 產(chǎn)品屬性

  • 500

  • RF/IF 和 RFID

  • RF 放大器

  • -

  • 1.6GHz ~ 2.4GHz

  • -

  • 31dB

  • -

  • 手機(jī)，CDMA，EDGE，GSM，TDMA，W-CDMA

  • 26V

  • 60mA

  • -

  • TO-272-16 變型，鷗翼

  • 帶卷 (TR)

  • MW4IC2230GNBR1TR

MW4IC2230GNBR1相關(guān)型號(hào)PDF文件下載

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