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MP4009_07 Datasheet

  • MP4009_07

  • Toshiba Semiconductor [High Power Switching Applications Ha...

  • 154.91KB

  • TOSHIBA

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MP4009
TOSHIBA Power Transistor Module
Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One)
MP4009
High Power Switching Applications
Hammer Drive, Pulse Motor Drive
Inductive Load Switching
Industrial Applications
Unit: mm
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Small package by full molding (SIP 10 pins)
High collector power dissipation (4-device operation)
: P
T
= 4 W (Ta = 25擄C)
High collector current: I
C (DC)
=
鈭?
A (max)
High DC current gain: h
FE
= 1000 (min) (V
CE
=
鈭?
V, I
C
=
鈭?
A)
Complementary to MP4003
Absolute Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Continuous base current
Collector power dissipation
(1 device operation)
Collector power dissipation
(4 devices operation)
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
鈭?00
鈭?00
鈭?
鈭?
鈭?
鈭?.1
2.0
Unit
V
V
V
A
A
W
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-25A1A
Weight: 2.1 g (typ.)
P
T
T
j
T
stg
4.0
150
鈭?5
to 150
W
擄C
擄C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(鈥淗andling Precautions鈥?Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
R1 R2
1
10
2
4
6
8
3
5
7
9
R1
鈮?/div>
5 k鈩? R2
鈮?/div>
120
鈩?/div>
1
2006-10-27

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