MMBTH10
NPN SURFACE MOUNT VHF/UHF TRANSISTOR
Features
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Designed for VHF/UHF Amplifier Applications
and High Output VHF Oscillators
High Current Gain Bandwidth Product
Ideal for Mixer and RF Amplifier Applications
with collector currents in the 100mA - 30 mA
Range
E
SOT-23
A
C
TOP VIEW
Dim
A
B
E
C
Min
0.37
1.20
A
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8擄
M
B
C
C
TOP VIEW
B
D
G
H
2.30
B
E
D
C
0.89
Mechanical Data
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Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking (See Page 2): K3H, K3Y
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approx.)
D
E
G
B
E
0.45
1.78
K
J
K
J
L
H
G
M
H
J
C
K
B
2.80
L
0.013
0.903
E
C
L
M
a
0.45
0.085
0擄
B
E
All Dimensions in mm
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@ T
A
= 25擄C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
qJA
T
j
, T
STG
MMBTH10
30
25
3.0
50
300
417
-55 to +150
Unit
V
V
V
mA
mW
擄C/W
擄C
Characteristic
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base- Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
Collector-Base Capacitance
Collector-Base Feedback Capacitance
Collector-Base Time Constant
Note:
@ T
A
= 25擄C unless otherwise specified
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
C
CB
C
RB
Rb鈥機(jī)c
Min
25
30
3.0
戮
戮
60
戮
戮
650
戮
戮
戮
Max
戮
戮
戮
100
100
戮
0.5
0.95
戮
0.7
0.65
9
Unit
V
V
V
nA
nA
戮
V
V
MHz
pF
pF
ps
Test Condition
I
C
= 1mA I
B
= 0
I
C
= 100mA, I
E
= 0
I
E
= 10mA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
= 4mA, V
CE
= 10.0V
I
C
= 4mA, I
B
= 400mA
I
C
= 4mA, V
CE
= 10.0V
V
CE
= 10V, f = 100MHz, I
C
= 4mA
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CB
= 10V, f = 1.0MHz, I
E
= 0
V
CB
= 10V, f = 31.8MHz, I
C
= 4mA
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
DS31031 Rev. 4 - 2
1 of 2
www.diodes.com
MMBTH10
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