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omponents
21201 Itasca Street Chatsworth
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MBR545
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
Maximum Ratings
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Operating Temperature: -55擄C to +125擄C
Storage Temperature: -55擄C to +150擄C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
45V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
45V
5 Amp
Schottky Barrier
Rectifier
45 Volts
TO-220AC
B
C
K
L
M
D
A
PIN
1
2
MBR545
MBR545
31.5V
E
F
G
Electrical Characteristics @ 25擄C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
I
F(AV)
5A
T
C
= 95擄C
I
H
J
N
I
FSM
150A
8.3ms, half sine
PIN 1
PIN 2
CASE
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
V
F
.60V
I
FM
= 5 A mper
T
J
= 25擄C
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MM
14.22
9.65
2.54
5.84
9.65
---
12.70
4.83
0.51
0.30
3.53
3.56
1.14
2.03
15.88
10.67
3.43
6.86
10.67
6.35
14.73
5.33
1.14
0.64
4.09
4.83
1.40
2.92
IR
0.1mA
15mA
T
J
= 25擄C
T
J
=100擄C
C
J
350pF
Measured at
1.0MHz, V
R
=4.0V
INCHES
.560
.625
.380
.420
.100
.135
.230
.270
.380
.420
---
.250
.500
.580
.190
.210
.020
.045
.012
.025
.139
.161
.140
.190
.045
.055
.080
.115
*Pulse test: Pulse width 300
碌sec,
Duty cycle 2%
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