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L2N7003LT1 Datasheet

  • L2N7003LT1

  • Small Signal MOSFET 115 mAmps, 60 Volts

  • 144.63KB

  • 3頁(yè)

  • LRC

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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N鈥揅hannel SOT鈥?3
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (R
GS
= 1.0 M鈩?
Drain Current
鈥?Continuous T
C
= 25擄C (Note 1.)
鈥?Continuous
T
C
= 100擄C (Note 1.)
鈥?Pulsed (Note 2.)
Gate鈥揝ource Voltage
鈥?Continuous
鈥?Non鈥搑epetitive (tp
鈮?/div>
50
碌s)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
鹵115
鹵75
鹵800
Unit
V
dc
V
dc
mAdc
L2N7002LT1
3
1
2
CASE 318, STYLE 21
SOT鈥?23 (TO鈥?36AB)
V
GS
V
GSM
鹵20
鹵40
Vdc
Vpk
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
W
N - Channel
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥? Board
(Note 3.) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
胃JA
T
J,
T
stg
417
鈥?5 to
+150
擄C/W
擄C
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
1
R
胃JA
P
D
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%.
3. FR鈥? = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
1
702
W
2
Gate
702
W
Source
= Device Code
= Work Week
ORDERING INFORMATION
Device
2N7002LT1
2N7002LT3
Package
SOT鈥?3
SOT鈥?3
Shipping
3000 Tape & Reel
10,000 Tape & Reel
L2N7002LT1鈥?/3

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