LESHAN RADIO COMPANY, LTD.
Switching diode
L1SS355T1
High speed switching
1
CATHODE
2
ANODE
1) Small surface mounting type.
2) High Speed.(t
rr
=1.2ns Typ.)
3) High reliability with high surge current handling capability.
4) Pb-Free package is available.
.
.
Applications
1
Features
2
SOD鈥?23
Silicon epitaxial planar
.
.
Construction
Device Marking and Ordering Information
Device
L1SS355T1
L1SS355T1G
Marking
A
A
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
.
Absolute maximum ratings
Parameter
(Ta=25擄C)
Limits
90
80
225
100
500
125
鈭?5~+125
Unit
V
V
mA
mA
mA
擄C
擄C
V
RM
V
R
I
FM
I
O
I
surge
Tj
Tstg
Symbol
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
.
Electrical characteristics
Parameter
(Ta=25擄C)
Symbol
V
F
I
R
C
T
t
rr
Min.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
Max.
1.2
0.1
3.0
4
Unit
V
碌A(chǔ)
pF
ns
I
F
=100mA
V
R
=80V
V
R
=0.5V, f=1MHz
V
R
=6V, I
F
=10mA, R
L
=100鈩?/div>
Conditons
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
1/3
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