SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURE
Complementary to KTC8550S.
L
KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
*
T
j
T
stg
RATING
35
30
5
800
-800
350
150
-55 150
0.6
)
UNIT
V
1
P
P
N
C
V
V
mA
mA
mW
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
M
1. EMITTER
2. BASE
3. COLLECTOR
K
* P
C
: Package Mounted On 99.5% Alumina (10 8
SOT-23
Marking
h
FE
Rank
Lot No.
Type Name
BK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h
FE
(1) Classification
C : 100 200,
D : 150
SYMBOL
I
CBO
V
(BR)CBO
V
(BR)CEO
h
FE
(1) (Note)
h
FE
(2)
V
CE(sat)
V
BE
f
T
C
ob
300
TEST CONDITION
V
CB
=15V, I
E
=0
I
C
=0.5mA, I
E
=0
I
C
=1mA, I
B
=0
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=350mA
I
C
=500mA, I
B
=20mA
V
CE
=1V, I
C
=500mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, f=1MHz, I
E
=0
MIN.
-
35
30
100
60
-
-
-
-
TYP.
-
-
-
-
-
-
-
120
13
MAX.
50
-
-
300
-
0.5
1.2
-
-
V
V
MHz
pF
UNIT
nA
V
V
2002. 9. 3
Revision No : 0
J
D
1/1
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