SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: t
on
=1.1 S(Typ.), t
f
=0.7 S(Typ.), at I
C
=1A
High Collector Voltage : V
CBO
=900V.
K
D
KTC3003HV
TRIPLE DIFFUSED NPN TRANSISTOR
B
C
A
N
E
G
J
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
900
530
9
1.5
A
3
0.75
1.1
150
-55 150
A
W
UNIT
V
L
F
H
F
1
2
3
M
V
V
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Emitter Cut-off Current
SYMBOL
I
EBO
h
FE
(1)
DC Current Gain
*h
FE
(2)
h
FE
(3)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
Transition Frequency
Turn-On Time
Storage Time
Fall Time
*Note : h
FE
Classification R:20
V
CE(sat)
I
C
=1.5A, I
B
=0.5A
I
C
=0.5A, I
B
=0.1A
V
BE(sat)
I
C
=1A, I
B
=0.25A
C
ob
f
T
t
on
t
stg
t
f
I
B1
I
B2
I
B1
=I
B2
=0.2A
DUTY CYCLE < 2%
=
I
B2
TEST CONDITION
V
EB
=9V, I
C
=0
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=0.4A
V
CE
=10V, I
C
=1A
I
C
=0.5A, I
B
=0.1A
MIN.
-
15
20
6
-
-
-
-
-
4
OUTPUT
TYP.
-
-
-
-
-
-
-
-
21
-
1.1
3.0
0.7
MAX.
10
50
50
-
0.8
UNIT
A
V
2.5
1
V
1.2
-
-
-
-
-
pF
MHz
S
S
S
V
CB
=10V, f=0.1MHz, I
E
=0
V
CE
=10V, I
C
=0.1A
300碌S
INPUT
I
B1
125鈩?/div>
-
-
-
V
CC
=125V
30, O:13 21, Y: 35~40
2007. 9. 10
Revision No : 1
1/2
1
2
