鈥?/div>
Collector-Base Voltage : V
CBO
=200V
Collector Current : I
C
=2A
Collector Dissipation : P
C
=25W(T
C
=25擄C)
Complement to KSB546
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Parameter
Value
200
150
5
2
25
150
- 55 ~ 150
Units
V
V
V
A
W
擄C
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= 500uA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= -500uA, I
C
= 0
V
CB
= 150V, I
E
= 0
V
CE
= 10V, I
C
= 0.4A
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.4A
5
120
Min.
200
150
5
50
400
1
V
MHz
Typ.
Max.
Units
V
V
V
碌A
h
FE
Classification
Classification
h
FE
Y
120 ~ 240
G
200 ~ 400
漏2004 Fairchild Semiconductor Corporation
Rev. B, February 2004
1
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