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K6R1004C1B Datasheet

  • K6R1004C1B

  • Samsung semiconductor [256Kx4 Bit (with OE) High Speed Stat...

  • SAMSUNG   SAMSUNG

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上傳產(chǎn)品規(guī)格書

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K6R1004C1B-C
Document Title
Preliminary
PRELIMINARY
CMOS SRAM
PRELIMINARY
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
Revision History
Rev No.
Rev. 0.0
Rev.1.0
History
Initial release with Design Target.
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Delete L-version.
2.3. Delete Data Retention Characteristics and Waveform.
2.4. Delete Industrial Temperature Range Part.
2.5. Delete TSOP2 Package.
2.6. Add Capacitive load of the test environment in A.C test load.
2.7. Change D.C characteristics.
Previous spec.
Changed spec.
Items
(8/10/12ns part)
(8/10/12ns part)
I
CC
150/140/130mA
150/145/140mA
I
SB
30mA
50mA
Draft Data
Apr. 1st, 1997
Jun. 1st, 1997
Remark
Design Target
Preliminary
Rev.2.0
Feb. 25th, 1998
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.0
February 1998

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