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K1S321615M-E Datasheet

  • K1S321615M-E

  • Samsung semiconductor [2Mx16 bit Uni-Transistor Random Acce...

  • SAMSUNG   SAMSUNG

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K1S321615M
Document Title
2Mx16 bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0
Initial Draft
- Design target
Revised
- Change package type from FBGA to TBGA.
- Improve operating current from 30mA to 25mA.
- Change input and output reference voltage from 1.1V to 1.5V at AC
test condition.
- Expand max operating voltage from 3.0V to 3.3V.
- Expand max operating temperature from 70擄C to 85擄C.
- Release speed from 70/85ns to 100ns.
- Release standby current form 170碌A(chǔ) to 200碌A(chǔ).
- Add Power up timing diagram.
- Add AC characteristics for continuous write.
Finalize
- Release standby current form 200碌A(chǔ) to 250碌A(chǔ).
- Release deep power down current form 10碌A(chǔ) to 20碌A(chǔ).
- Release t
WC
for continuous write operation from 100ns to 110ns.
- Release t
CW
for continuous write operation from 90ns to 100ns.
- Release t
AW
for continuous write operation from 90ns to 100ns.
- Release t
BW
for continuous write operation from 90ns to 100ns.
- Release t
WP
for continuous write operation from 90ns to 100ns.
Revised
- Add product list
Revised
- Improve standby current from 250碌A(chǔ) to 150碌A(chǔ).
Draft Date
Remark
September 4, 2000 Advance
0.1
February 9, 2001
Preliminary
1.0
March 30, 2001
Final
2.0
April 16, 2001
Final
3.0
May 28, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
-1-
Revision 3.0
May 2001

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