廬
ISL6614
Data Sheet
July 25, 2005
FN9155.4
Dual Advanced Synchronous Rectified
Buck MOSFET Drivers with Protection
Features
The ISL6614 integrates two ISL6613 MOSFET drivers and is
specifically designed to drive two independent power
channels in a Multi-Phase interleaved buck converter
topology. These drivers combined with HIP63xx or ISL65xx
Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6614 drives both the upper and lower gates
simultaneously over a range from 5V to 12V. This drive-
voltage provides the flexibility necessary to optimize
applications involving trade-offs between gate charge and
conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during startup. The over-
temperature protection feature prevents failures resulting
from excessive power dissipation by shutting off the outputs
when its junction temperature exceeds 150擄C (typically). The
driver resets once its junction temperature returns to 108擄C
(typically).
The ISL6614 also features a three-state PWM input which,
working together with Intersil鈥檚 multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
Features
鈥?Pin-to-pin Compatible with HIP6602 SOIC family for Better
Performance and Extra Protection Features
鈥?Quad N-Channel MOSFET Drives for Two Synchronous
Rectified Bridges
鈥?Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
鈥?Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
鈥?Internal Bootstrap Schottky Diode
鈥?Bootstrap Capacitor Overcharging Prevention
鈥?Supports High Switching Frequency (up to 1MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
鈥?Three-State PWM Input for Output Stage Shutdown
鈥?Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
鈥?Pre-POR Overvoltage +Protection
鈥?VCC Undervoltage Protection
鈥?Over Temperature Protection (OTP) with 42擄C Hysteresis
鈥?Expandable Bottom Copper Pad for Enhanced Heat
Sinking
鈥?QFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat
No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
鈥?Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
鈥?Core Regulators for Intel廬 and AMD廬 Microprocessors
鈥?High Current DC-DC Converters
鈥?High Frequency and High Efficiency VRM and VRD
Related Literature
鈥?Technical Brief TB363 鈥淕uidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)鈥?/div>
鈥?Technical Brief 400 and 417 for Power Train Design,
Layout Guidelines, and Feedback Compensation Design
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
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Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright 漏 Intersil Americas Inc. 2004, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
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