H1061
TRIPLE DIFFUSED SILICON NPN TRANSISTOR
鈥?designed for low frequency power amplifier
MAXIMUM RATINGS
Characteristic
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current (Peak)
Collector power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
C
T
J
T
stg
Value
100
80
5
4
8
40
150
-55~150
Unit
V
V
V
A
A
W
擄C
擄C
1 : Base
2 : Collector (Heat Sink)
3 : Emitter
Unit in mm
TO-220AB
Weight: 1.9g
ELECTRICAL CHARACTERISTICS
Characteristic
Collector Cut Off Current
Collector 鈥?Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Voltage
Transition Frequency
Collector Out put Capacitance
Symbol
I
CBO
V
(BR)CEO
h
FE
V
CE(sat)
V
BE
f
T
Test Condition
V
CB
= 80V, I
E
= 0A
I
C
= 50mA, I
B
= 0A
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 0.1A
I
C
= 2A, I
B
= 0.2A
V
CE
= 4V, I
C
= 1A
V
CE
= 5V, I
C
= 0.5A
V
CB
= 20V, I
E
= 0A, f=1MHz
Min.
-
80
60
35
-
-
-
-
Typ.
-
-
-
-
-
-
10
40
Max.
100
-
200
-
1
1.5
-
-
Unit
碌A
V
-
-
V
V
MHz
Pf
HIGH POWER
DISSIPATION
MEDIUM SPEED
POWER
SWITCHING
C
ob
Classification of h
FE
Rank
Range
B
60 to 120
C
100-200
TO 鈥?220AB
PMC
reserves the right to make changes without further notice to any products herein.
PMC
makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does
PMC
assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential damages. The examples of applied circuits are provided as reference to the
reader therefore we shall not undertake any responsibility for the exercise of rights by third parties.
錚?/div>
PMC
Components Pte Ltd.
,
Singapore, 2000
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