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GWM70-01P2 Datasheet

  • GWM70-01P2

  • Three phase full bridge with Trench MOSFETs in DCB isolated ...

  • 68.84KB

  • 2頁

  • IXYS   IXYS

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Advanced Technical Information
GWM 70-01P2
V
DSS
= 100 V
I
D25
= 70 A
鈩?/div>
R
DSon typ.
= 11 m鈩?/div>
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
L+
G3
G1
S3
S1
L1
L2
L3
G4
G2
S4
S2
G6
S6
L-
S5
G5
Pins
Gate
er
Pow
Pins
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C (diode)
T
C
= 90擄C (diode)
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
100
鹵20
70
50
130
85
V
V
A
A
A
A
Applications
AC drives
鈥?in automobiles
- electric power steering
- starter generator
鈥?in industrial vehicles
- propulsion drives
- fork lift drives
鈥?in battery supplied equipment
Features
鈥?MOSFETs in trench technology:
- low R
DSon
- optimized intrinsic reverse diode
鈥?package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
Symbol
Conditions
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
T
VJ
= 25擄C
T
VJ
= 125擄C
2
0.1
0.2
110
18
44
35
85
150
70
0.8
80
1.7
1.25
11
24
14 m鈩?/div>
m鈩?/div>
4
1
V
碌A(chǔ)
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
V
ns
0.85 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
on chip level at
V
GS
= 10 V; I
D
= 35 A
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 80 V; I
D
= 25 A
V
GS
= 10 V; V
DS
= 30 V;
I
D
= 25 A; R
G
= 10
鈩?/div>
(diode) I
F
= 35 A; V
GS
= 0 V
(diode) I
F
= 75 A; -di/dt = 100 A/碌s; V
DS
= 30 V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2006 IXYS All rights reserved
1-2
0604

GWM70-01P2 產(chǎn)品屬性

  • 20

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 陣列

  • -

  • 6 N-溝道（3 相橋）

  • 標(biāo)準(zhǔn)型

  • 100V

  • 70A

  • 14 毫歐 @ 35A，10V

  • 4V @ 1mA

  • 110nC @ 10V

  • -

  • -

  • 表面貼裝

  • ISOPLUS-DIL?

  • ISOPLUS-DIL?

  • 管件

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    Three phase full bridge with Trench MOSFETs in DCB isolated ...
    IXYS
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    Three phase full bridge with Trench MOSFETs in DCB isolated ...
    IXYS [IXYS...

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