鈩?/div>
I
D25
= 190 A
MOSFETs
Symbol
V
DSS
V
GS
I
D25
I
D90
I
F25
I
F90
Symbol
T
C
= 25擄C
T
C
= 90擄C
T
C
= 25擄C (diode)
T
C
= 90擄C (diode)
Conditions
Conditions
T
VJ
= 25擄C to 150擄C
Maximum Ratings
40
鹵20
190
145
125
80
V
V
A
A
A
A
Applications
AC drives
鈥?in automobiles
- electric power steering
- starter generator
鈥?in industrial vehicles
- propulsion drives
- fork lift drives
鈥?in battery supplied equipment
Features
鈥?MOSFETs in trench technology:
- logic level gate control
- low R
DSon
- optimized intrinsic reverse diode
鈥?package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
Characteristic Values
(T
VJ
= 25擄C, unless otherwise specified)
min.
typ. max.
T
VJ
= 25擄C
T
VJ
= 125擄C
2
0.1
0.2
94
18
29
40
85
140
90
1.0
70
1.1
1.6
2.0
3.2
2.6 m鈩?/div>
m鈩?/div>
4
1
V
碌A(chǔ)
mA
碌A(chǔ)
nC
nC
nC
ns
ns
ns
ns
V
ns
0.85 K/W
K/W
R
DSon
V
GSth
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
F
t
rr
R
thJC
R
thJH
on chip level at
V
GS
= 10 V
V
DS
= 20 V; I
D
= 1 mA
V
DS
= V
DSS
; V
GS
= 0 V; T
VJ
= 25擄C
T
VJ
= 125擄C
V
GS
= 鹵20 V; V
DS
= 0 V
V
GS
= 10 V; V
DS
= 14 V; I
D
= 25 A
V
GS
= 10 V; V
DS
= 30 V;
I
D
= 25 A; R
G
= 10
鈩?/div>
(diode) I
F
= 110 A; V
GS
= 0 V
(diode) I
F
= 20 A; -di/dt = 100 A/碌s; V
DS
= 20 V
with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
漏 2005 IXYS All rights reserved
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IXYS
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