PHOTODIODE
GaAsP photodiode
Diffusion type
Red sensitivity extended type
Features
Applications
l
Low dark current
l
High stability
l
Red sensitivity extended type
l
Analytical instruments
l
Color identification
s
General ratings / Absolute maximum ratings
Type No.
G1735
G1736
G1737
G1738
G1740
G3297
Dimensional
outline/
Window
material *
鉃€/K
鉃?K
鉃?K
鉃?R
鉃?R
鉃?L
Package
TO-18
TO-5
TO-8
Ceramic
Ceramic
TO-18
Active area
size
(mm)
1.3 脳 1.3
2.7 脳 2.7
5.6 脳 5.6
1.3 脳 1.3
5.6 脳 5.6
1.3 脳 1.3
Effective
active
area
(mm
2
)
1.66
7.26
29.3
1.66
29.3
1.66
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(擄C)
(擄C)
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25
擄C
, unless otherwise noted)
Terminal
Temp.
Rise time
Dark
Short circuit
capacitance
coefficient
tr
current
current
Ct
of
V
R
=0 V
Isc
I
D
V
R
=0 V
I
D
Type No.
Max.
x
R
L
=1 k鈩?/div>
GaP He-Ne 100
l
T
CID
f=10 kHz
LED
laser
位p
560 nm 633 nm
Min. Typ.
V
4
=10 mV
V
4
=1 V
(nm)
(nm)
(pF)
(碌A(chǔ)) (碌A(chǔ)) (pA) (pA)
(times/擄C)
(碌s)
G1735
0.2 0.25 2
20
0.5
250
G1736
0.8 1.1
5
50
1.8
1200
G1737
4
5
10
100
10
4500
0.4 0.22 0.29
1.07
400 to 760
710
G1738
0.2 0.25 2
20
0.5
250
G1740
4
5
10
100
10
4500
G3297
1.5 1.8
2
20
0.5
250
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
Spectral
Peak
response
sensitivity
range
wavelength
位
位p
Photo sensitivity
S
(A/W)
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Min. Typ.
(G鈩? (G鈩? (W/Hz
1/2
)
5
25 2.0 脳 10
-15
2
15 3.2 脳 10
-15
1
5 4.5 脳 10
-15
5
25 2.0 脳 10
-15
1
5 4.5 脳 10
-15
5
25 2.0 脳 10
-15
1
2
3
4
