TetraFET
D2290UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Top View
E
4
3
D
C
K
L
1
F
B
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
1W 鈥?12.5V 鈥?1GHz
SINGLE ENDED
FEATURES
鈥?SIMPLIFIED AMPLIFIER DESIGN
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
A
J
G
H
I
SOT143 PACKAGE
PIN 1 鈥?DRAIN
PIN 2 鈥?SOURCE
PIN 3 鈥?GATE
PIN 4 鈥?SOURCE
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
'LP
$
%
&
'
(
)
*
+
,
-
.
/
PLQ
PD[
%6&
%6&
5()
PP
PLQ
PD[
%6&
%6&
5()
,QFKHV
鈥?HIGH GAIN 鈥?10 dB MINIMUM
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
1W
40V
鹵20V
2A
鈥?5 to 125擄C
150擄C
Document Number 3890
Issue 3
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