TetraFET
D1211UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
N
8
D
1
2
C
B
P
7
6
5
3
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W 鈥?12.5V 鈥?500MHz
SINGLE ENDED
FEATURES
H
K
L
J
E
F
G
M
鈥?SIMPLIFIED AMPLIFIER DESIGN
鈥?SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 鈥?SOURCE
PIN 6 鈥?GATE
PIN 7 鈥?GATE
PIN 8 鈥?SOURCE
SO8 PACKAGE
PIN 1 鈥?SOURCE
PIN 2 鈥?DRAIN
PIN 3 鈥?DRAIN
PIN 4 鈥?SOURCE
鈥?VERY LOW C
rss
鈥?SIMPLE BIAS CIRCUITS
鈥?LOW NOISE
鈥?HIGH GAIN 鈥?10 dB MINIMUM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45擄
0擄
7擄
0.20
2.18
4.57
Tol.
鹵0.08
鹵0.08
鹵0.08
鹵0.08
鹵0.08
鹵0.08
鹵0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
鹵0.08
Max.
鹵0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45擄
0擄
7擄
0.008
0.086
0.180
Tol.
鹵0.003
鹵0.003
鹵0.003
鹵0.003
鹵0.003
鹵0.003
鹵0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
鹵0.003
Max.
鹵0.003
APPLICATIONS
鈥?/div>
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain 鈥?Source Breakdown Voltage
Gate 鈥?Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
30W
40V
鹵20V
10A
鈥?5 to 150擄C
200擄C
Prelim. 12/95
1
2
