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CXT3150 Datasheet

  • CXT3150

  • Central Semiconductor Corp [SURFACE MOUNT NPN SILICON POWER...

  • 86.53KB

  • CENTRAL

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CXT3150
SURFACE MOUNT
NPN SILICON POWER TRANSISTOR
Central
TM
Semiconductor Corp.
POWER
TM
89
SOT-89 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CXT3150
type is a NPN Silicon Power Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high current, high gain, fast
switching applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS:
(TA=25擄C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ,Tstg
JA
50
25
7.0
5.0
1.0
1.2
-65 to +150
104
UNITS
V
V
V
A
A
W
擄C
擄C/W
ELECTRICAL CHARACTERISTICS:
(TA=25擄C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCEO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
TEST CONDITIONS
VCB=50V
VEB=7.0V
IC=10mA
IC=3.0A, IB=150mA
IC=4.0A,
IC=3.0A,
IC=4.0A,
IB=200mA
IB=150mA
IB=200mA
250
150
50
150
50
25
0.5
0.6
1.10
1.40
550
MIN
TYP
MAX
1.0
1.0
UNITS
碌A(chǔ)
碌A(chǔ)
V
V
V
V
V
VCE=2.0V, IC=500mA
VCE=2.0V, IC=2.0A
VCE=2.0V, IC=5.0A
VCE=6.0V, IC=50mA, f=200MHz
VCB=10V, IE=0, f=1.0MHz
MHz
pF
R5 (04-May 2005)

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