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CEB658N Datasheet

  • CEB658N

  • Chino-Excel Technology [N-Channel Enhancement Mode Field Ef...

  • CET

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CEP658N/CEB658N
CEF658N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP658N
CEB658N
CEF685N
V
DSS
180V
180V
180V
R
DS(ON)
0.22鈩?/div>
0.22鈩?/div>
0.22鈩?/div>
I
D
16A
16A
16A
d
PRELIMINARY
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
V
DS
V
GS
I
D
I
DM
e
P
D
T
J
,T
stg
16
64
125
1.0
180
TO-220F
Units
V
V
20
16
40
0.32
d
A
A
W
W/ C
C
64
d
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
胃JC
R
胃JA
1.0
62.5
Limit
3.1
65
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2006.Oct
http://www.cetsemi.com

CEB658N PDF文件相關(guān)型號(hào)

CEP658N

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