Philips Semiconductors
Product specification
Thyristors
BT151F series
GENERAL DESCRIPTION
Glass passivated thyristors in a full
pack, plastic envelope, intended for
use in applications requiring high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT151F-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500
500
5.7
9
100
650
650
5.7
9
100
800
800
5.7
9
100
V
A
A
A
PINNING - SOT186
PIN
1
2
3
DESCRIPTION
cathode
anode
gate
PIN CONFIGURATION
case
SYMBOL
a
k
case isolated
1 2 3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
hs
鈮?/div>
87 藲C
all conduction angles
half sine wave; T
j
= 125 藲C prior
to surge; with reapplied V
DRM(max)
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/碌s
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500
500
1
MAX.
-650
650
1
5.7
9
100
110
50
50
2
5
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A
A
2
s
A/碌s
A
V
V
W
W
藲C
藲C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/碌s.
February 1996
1
Rev 1.100
1
2
3
4
5
6
