Philips Semiconductors
Product specification
Thyristors
BT145 series
GENERAL DESCRIPTION
Glass passivated thyristors in a plastic
envelope, intended for use in
applications
requiring
high
bidirectional
blocking
voltage
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
QUICK REFERENCE DATA
SYMBOL
V
DRM
,
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
PARAMETER
BT145-
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500R
500
16
25
300
600R
600
16
25
300
800R
800
16
25
300
V
A
A
A
PINNING - TO220AB
PIN
1
2
3
tab
DESCRIPTION
cathode
anode
gate
anode
PIN CONFIGURATION
tab
SYMBOL
a
k
1 23
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
-
half sine wave; T
mb
鈮?/div>
101 藲C
all conduction angles
half sine wave; T
j
= 25 藲C prior to
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
TM
= 50 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/碌s
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX.
-500R -600R -800R
500
1
600
1
800
16
25
300
330
450
200
5
5
5
20
0.5
150
125
UNIT
V
A
A
A
A
A
2
s
A/碌s
A
V
V
W
W
藲C
藲C
V
DRM
, V
RRM
Repetitive peak off-state
voltages
I
T(AV)
I
T(RMS)
I
TSM
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
2
t
dI
T
/dt
I
GM
V
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
over any 20 ms period
Storage temperature
Operating junction
temperature
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/碌s.
October 1997
1
Rev 1.200
1
2
3
4
5
6
