鈻?/div>
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25擄C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
鈭?00
鈭?00
鈭?
鈭?
鈭?
40
2.0
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
2.54
鹵0.3
5.08
鹵0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
BE
I
CBO
I
EBO
h
FE1
h
FE2 *
h
FE3
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CB
= 鈭?00
V, I
E
=
0
V
EB
= 鈭?
V, I
C
=
0
V
CE
= 鈭?
V, I
C
= 鈭?0
mA
V
CE
= 鈭?
V, I
C
= 鈭?
A
V
CE
= 鈭?
V, I
C
= 鈭?
A
I
C
= 鈭?
A, I
B
= 鈭?/div>
0.3 A
V
CE
= 鈭?
V, I
C
= 鈭?/div>
0.5 A, f
=
1 MHz
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
20
170
20
40
20
鈭?
V
MHz
pF
200
Min
Typ
Max
鈭?.8
鈭?0
鈭?0
Unit
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
40 to 80
Q
60 to 120
P
100 to 200
Publication date: February 2003
SJD00039AED
1
1
2
3
