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200 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Internal Control Timer
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10,000 Cycles
Data Retention: 10 Years
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28LV64B is a high-performance electrically erasable programmable read only
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-
factured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers ac-
cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-
lected, the CMOS standby current is less than 20
碌A(chǔ).
The AT28LV64B is accessed like a static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
(continued)
64K (8K x 8)
Low Voltage
CMOS
E
2
PROM with
Page Write and
Software Data
Protection
Pin Configurations
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
AT28LV64B
PDIP, SOIC
Top View
Data Inputs/Outputs
No Connect
Don鈥檛 Connect
PLCC
Top View
TSOP
Top View
Note: PLCC package pins 1 and
17 are DON鈥橳 CONNECT.
0299C
2-135