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Fast Read Access Time - 55 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64-Bytes
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-Byte Page Write Operation
Low Power Dissipation
40 mA Active Current
100
碌A
CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Single 5V
鹵
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28HC64B is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel鈥檚 advanced nonvolatile CMOS technology, the device offers
access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100
碌A.
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
(continued)
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don鈥檛 Connect
64K (8K x 8)
High Speed
CMOS
E
2
PROM with
Page Write and
Software Data
Protection
Pin Configurations
TSOP
Top View
AT28HC64B
PDIP, SOIC
Top View
PLCC
Top View
Note: PLCC package pins 1 and
17 are DON鈥橳 CONNECT.
0274D
2-267