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APT50GT120JRDQ2 Datasheet

  • APT50GT120JRDQ2

  • Boost chopper Trench + Field Stop IGBT

  • ADPOW

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TYPICAL PERFORMANCE CURVES
廬
APT50GT120JRDQ2
1200V
APT50GT120JRDQ2
Thunderbolt IGBT
廬
The Thunderblot IGBT
廬
is a new generation of high voltage power IGBTs. Using Non- Punch
Through Technology, the Thunderblot IGBT
廬
offers superior ruggedness and ultrafast
switching speed.
鈥?Low Forward Voltage Drop
鈥?Low Tail Current
鈥?RBSOA and SCSOA Rated
鈥?Intergrated Gate Resistor: Low EMI, High Reliability
鈥?High Freq. Switching to 50KHz
鈥?Ultra Low Leakage Current
E
G
C
E
SO
2
T-
27
ISOTOP
廬
"UL Recognized"
file # E145592
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25擄C
Continuous Collector Current @ T
C
= 110擄C
Pulsed Collector Current
1
All Ratings: T
C
= 25擄C unless otherwise speci鏗乪d.
APT50GT120JRDQ2
UNIT
Volts
1200
鹵30
72
32
150
150A @ 1200V
379
-55 to 150
300
Amps
Switching Safe Operating Area @ T
J
= 150擄C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
擄C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 3mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 2mA, T
j
= 25擄C)
MIN
TYP
MAX
Units
1200
4.5
2.7
2
2
5.5
3.2
4.0
6.5
3.7
400
TBD
300
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25擄C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125擄C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25擄C)
Volts
I
CES
I
GES
R
G(int)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125擄C)
Gate-Emitter Leakage Current (V
GE
= 鹵20V)
Intergrated Gate Resistor
碌A(chǔ)
nA
鈩?/div>
9-2005
052-6278
Rev A
5
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT50GT120JRDQ2 產(chǎn)品屬性

  • 10

  • 半導(dǎo)體模塊

  • IGBT

  • Thunderbolt IGBT®

  • NPT

  • 單一

  • 1200V

  • 3.7V @ 15V，50A

  • 72A

  • 400µA

  • 2.5nF @ 25V

  • 379W

  • 標(biāo)準(zhǔn)型

  • 無

  • 底座安裝

  • ISOTOP

  • ISOTOP?

APT50GT120JRDQ2相關(guān)型號PDF文件下載

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